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| NTE210 (NPN) & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications such as series, shunt and switching regulators, and low and high frequency inverters and converters. Features: D TO202 Type Package: 2W Free Air Dissipation @ TA = +25C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TA = +25C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260C Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20C/W Note 1. Pulse Test: Pulse Width 300s. Note 2. The actual power dissipation capability of the TO202 type package is 2W @ TA = +25C. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO IC = 10mA, IB = 0 ICES IEBO VCE = 90V VEB = 5V 75 - - - - - - 100 100 V nA nA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 3) DC Current Gain hFE VCE(sat) VBE(sat) fT Ccb IC = 100mA, VCE = 2V IC = 1A, VCE = 2V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current-Gain Bandwidth Product Collector-Base Capacitance NTE210 NTE211 IC = 20mA, VCE = 10V, f = 20MHz VCB = 20V, IE = 0, f = 1MHz 75 - - - - - 375 12 18 MHz pF pF IC = 500mA, IB = 50mA IC = 500mA, IB = 50mA 120 10 - - - - - - 360 - 1.0 1.5 V V Symbol Test Conditions Min Typ Max Unit Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .380 (9.56) C .500 (12.7) 1.200 (30.48) Ref .300 (7.62) .180 (4.57) .132 (3.35) Dia .325 (9.52) .070 (1.78) x 45 Chamf .050 (1.27) .400 (10.16) Min E B C .100 (2.54) .100 (2.54) |
Price & Availability of NTE211
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